Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

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The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density.However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses.In order to increase the immunity against the crosstalk phenomenon chiggate.com in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply.In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing.The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency.

The results show that the proposed gate driver with RC bilstein shocks jeep xj snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage.